Proton-Electrotex Unveils Thyristor Modules With Increased Power Density
The new devices feature higher surge current ratings and lower thermal junction-case resistance
The new МТ3-700-18-А2 modules are solidly based on their predecessor devices, the МТ3-540-18-А2. The higher power density was achieved by improving the semiconductor topology, with very few changes to other design elements. This involved increasing the active cathode area by 10%, reducing the thickness of the diffusion element and improving the diffusion profile.
Image courtesy of Proton-Electrotex
The new МТ3-700-18-А2 Thyristor Modules feature repetitive peak off-state and reverse voltage (VDRM/ VRRM) values are 1400 - 1800 volts. Turn off time (TQ) is 250 µs.
As compared to the previous MT3-540-18
- The junction to case thermal resistance (Rthjc), has improved by 8% to 0.049 ℃/W per arm
- Surge on-state current is up 20% to 23 kA
- Mean current in open state (ITAV) has increased by 20% to 700 amps
Available Configurations for the МТ3-700-18-А2
The new device is available as a:
- Thyristor module (MT)
- Thyristor – Diode module (MT/D)
- Diode – Thyristor module (MD/T)
Internally, the sub-units are connected as either:
- In a serial connection
- Common cathode mode
- Common anode mode
The wide array of choices are illustrated as below:
Thyristor module, from left to right: serial connection, common cathode, common anode. Modified image courtesy of Proton-Electrotex Data Sheet
The next diagram illustrates the Thyristor – Diode modules (MT/D) and the Diode – Thyristor modules (MD/T).
Modified image courtesy of Proton-Electrotex Data Sheet
Going from left to right, the 1st, 3rd, and 5th places are the serial connection, common cathode, and common anode MT/D modules.
Again going from left to right, the 2nd, 4th, and 6th places are the serial connection, common cathode, and common anode MD/T modules.
Important Maximum Allowable Ratings for МТ3-700-18-А2 Thyristor Modules
Triggering
- Peak forward gate current (IFGM): 8 amps
- Peak reverse gate voltage (VRGM): 5 volts
- Gate power dissipation (PG): 4 watts
Switching
- Critical rate of rise of on-state current, non-repetitive ((diT/dt)crit): 1000 amps/microsecond (f=1 Hz)
Mechanical
- Acceleration under vibration: 50 meters/second2
Representative Characteristics for the МТ3-700-18-А2 Thyristor Modules
Triggering
- Gate trigger direct voltage (VGT ): Ranges from 1.0 to 2.0 volts, depending on junction temperature
- Gate trigger direct current (IGT): Ranges from 100 to 300 mA, depending on junction temperature
Switching
- Total recovered charge (QRR): 1800 µC
- Delay time: (tgd): 1.0 µsec
- Turn-on time: (tgt): 3.0 µsec
- Turn-off time: (tq): 250 µsec
Applications
- Energy conversion
- AC regulators
- Electric drives
- Power sources
- Rectifier bridges
- DC motor control
Physical Considerations
Mounting the МТ3-700-18-А2 Thyristor Modules is simplified because the necessary pressure of the semiconductor element is provided structurally
Junction temperature can range from -40 to +130 ℃
As can be seen from the picture at the top of this article, these Modules, like all devices of this type, have a complex geometric shape. At their largest extent, length and width are 149 by 60 by mm
Weight is 1500 grams