Microsemi Unveils Industry’s First 95W Front-End Solution Compliant with Power-over-HDBaseT

Microsemi Corporation announced its new advanced front-end power device (PD) interface controllers (ICs) for high-power HDBase-T and four-pair Power-over-Ethernet (PoE) applications. The PD70210/PD70211 represents the only solution available in the market that is compliant with Power-over-HDBaseT (PoH) and receives up to 95 watts using an internalfield-effect transistor (FET). The device enables wider reach for PoE communications applications including outdoor IP cameras, small cells, thin clients and monitors. The PD70210/PD70211 PoE PD IC offers a solution particularly suited for high power applications in the growing broadband market. According to market research firm Infonetics, the small cell market is expected to reach $331 million by the end of 2012, with an expected compound annual growth rate (CAGR) of 62 percent to $2.3 billion in 2016. Microsemi's new device is compatible with its PD-960x midspan family to provide a complete end-to-end HDBaseT solution.

"Microsemi's front-end PD interface controllers offer the communications market the highest levels of power available today for PoH applications and increase our end-to-end solutions to a growing high end segment of the market," said Amir Asvadi, vice president and general manager of the Analog Mixed Signal Group at Microsemi. "With this new solution, our customers can now use PoE technology in a much wider array of applications--both for today's latest power devices, as well as for next-generation products that will demand increased levels of power."

Unlike the non-standard alternatives, PoH has the same safety mechanisms of IEEE802.3at-2009, with detection performed separately on data and spare pairs, ensuring interoperability. Microsemi's front-end PD IC is compliant with IEEE802.3af, IEEE802.3at and HDBaseT standards and power is provided using HDBaseT or other two-pair/four-pair configurations. As the first solution of its kind, the device supports 95W in one IC with internal FET and operates at high efficiency levels.