Low RDS(on) FETs for Load Switches in USB Type-C Mobile Devices

Toshiba Corporation's announced the addition of new products that utilize a newly-developed high power dissipation, small-size TSOP6F package to its line-up of small low on-resistance MOSFETs for charging circuit load switches in mobile devices, including smartphones and tablets. Sample shipments of the first product in the new line-up, the 20V, 6A, P-channel single MOSFET, the SSM6J801R, start today. Mass production is scheduled to start from the end of December.

Toshiba has developed the new 2.9mm x 2.8mm small-size package TSOP6F to meet demand for smaller devices for charging circuit load switches and LED drive circuits in mobile devices. Despite having the same mounting space and land pattern as the existing SOT-457 package, the new package realizes power dissipation of 1.5W.

Small-size low on-resistance MOSFETs using the new TSOP6F package will be launched with the new SSM6J801R MOSFET, while future plans to expand the line-up to include 2-in-1 products. Additional products planned for introduction include:

The SSM6J808R a 40V, 7A, single p-channel MOSFET and the SSM6K810R a 100V, 3.5A, single n-channel MOSFET both scheduled to enter production in the second quarter of 2017. The SSM6N813R a 100V, 3.5A, dual n-channel MOSFET scheduled to enter production in the third quarter of 2017 and the SSM6N815R a 100V, 2A, dual n-channel MOSFET scheduled to enter production in May, 2017.