IXYS Presents Q2-Class HiPerFET Family

IXYS Corp. (Santa Clara, CA), a leader in power semiconductors for power conversion and motion control applications, announced its new family of Q2-Class HiPerFETs, which utilizes IXYS' second-generation HiPerFET™ process technology that reduces gate charge and internal gate resistance substantially over competition, enabling reduced gate drive and higher switching frequencies. The MOSFETs are suitable for power conversion applications, including IT and telecom ac-dc power supplies, medical equipment, high-voltage power supplies, and motor drives.

The Q2-Class MOSFETs offer a gate charge that has been reduced by 25% and an internal Rg reduced by up to a factor of 100, a commutating dV/dt (in excess of 20V/ns) and UIS performance, and an intrinsic fast recovery diode reducing the recovery time of the body diode to 250 nanoseconds or less. The ruggedness of IXYS' Q2 HiPerFET power MOSFETs improve the long-term reliability of systems, by offering significant safety margins.

A broad range of Q2 HiPerFETs are available at rated voltages of 500V to 1,200V, with current ratings of 14A to 80A in a range of package options, including TO-247, PLUS247, ISOPLUS247™, TO-264, PLUS264 and SOT-227. Products offered include the IXFH36N55Q2 rated at 36A and 550V with an Rds(on) of 160 milliohms and a Qg of 105nC, and the IXFH14N100Q2 rated at 14A and 1,000V with an Rds(on) of 900 milliohms and a Qg of 82nC.