IXYS Introduces A New Family Of P-Channel Power MOSFETs
IXYS Corp. announced the introduction of 40 to 100V TrenchP™ P-Channel Power MOSFETs with what is described as 30% lower device on-resistance per unit area than the best competing P-Channel devices on the market.
This new family of P-Channel devices is said to capitalize on benefits derived from IXYS’ trench cell technology. They feature an ultra low on-resistance (Rdson) and gate charge (Qg), minimizing conduction and switching losses, while promoting improved operating and thermal efficiencies.
These devices are suitable for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, bypassing additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This is said to enable designers to reduce component count, thereby improving drive circuit simplicity and overall component cost structure. Additionally, it allows for the design of a complementary power output stage with a corresponding IXYS N-Channel MOSFET for a power half-bridge stage with a simple drive circuit.
The IXTP32P05T (-50V, -32A, Qg = 46nC, Rdson = 36mΩ) and IXTP28P065T (-65V, -28A, Qg = 46nC, Rdson = 45mΩ) are some examples that are said to illustrate the superior electrical and thermal efficiencies presented by the TrenchP™ P-Channel Power MOSFET family. Additional features include an extended forward bias safe operating area (FBSOA), fast switching performance and excellent avalanche capabilities.
These products are available to support applications requiring voltage and current ratings from 40 to 100V and 18 to 32A. Package options include the standard through-hole TO-220 and surface mount TO-263 package. Common applications include high side or load switching, dc-dc converters, high current regulators, dc choppers, CMOS high power amplifiers, push-pull amplifiers and power solid state relays.
