New Industry Products

IXYS Extends Polar™ Power MOSFET Family To 1200V

October 31, 2007 by Jeff Shepard

IXYS Corp. announced the release of 1000 to 1200V Polar Standard and HiPerFET™ Power MOSFETs that improve the performance of high voltage power conversion systems. These new Polar Power MOSFETs are said to improve efficiency by significantly reducing typical on-resistance ‘Ron’ by 20% – a result of IXYS proprietary technology.

IXYS is extending its Polar offering with over 70 new Polar Power MOSFETs rated at 1000, 1100 and 1200V to facilitate optimum part selection. The HiPerFET family offers the additional benefits of a fast intrinsic body diode for lower trr and Qrr with improved hard-switching efficiency. All of these Polar Power MOSFETs are offered in standard packages and a variety of IXYS ISOPLUS packages with integral backside case isolation. The IXTA06N120P (1200V, 0.6A, Ron of 32Ω) and IXFB44N100P (1000V, 44A, Ron of 0.220Ω) illustrate the range in power handling capabilities of this new product offering.

Common 1000-1200V applications include ac-dc power supplies, inverters, high voltage lighting, industrial machinery and medical equipment. These rugged Polar Power MOSFETs are suitable for high frequency switching under challenging operating conditions.

"The power conversion market continues to push power and voltage limits of power MOSFETS to achieve higher power output and efficiency. Our scientists and engineers are able to produce better power MOSFETs in world class CMOS IC fabs which offer our customers excellent performance/price ratio and proven IXYS reliability, which result in better performance and energy efficiency in power systems," commented Dr. Nathan Zommer, IXYS CEO.