IR Offers IRF7495/IRF7493 Power MOSFETs

International Rectifier Corp. (IR, El Segundo, CA) introduced the new 100V rated IRF7495 and the 80V rated IRF7493 n-channel HEXFET power MOSFETs optimized for isolated full-bridge or half-bridge topology dc/dc converters used in telecommunications systems. The IRF7495 and IRF7493 have low device on-resistance and low gate-to-drain charge, making them suitable for converter switching frequencies up to 500kHz.

The new MOSFETs feature an increased efficiency that translates into over 10°C cooler junction temperatures; as much as 17% lower combined on-state resistance, RDS(on), and gate charge, QG figure of merit; a reduction in overall power loss in 150W active ORing applications versus standard diode solutions by as much as 90%; a package size reduction to an SO-8 from a bulky D2Pak; suitability for 48V hot-swap applications, and as synchronous rectifiers for regulated 12V to 24V output voltages; and between 5% to 10% better on-state resistance versus similar competing devices, according to the company.

The IRF7493 and IRF7495 are available immediately. Pricing for both devices is $0.57 each in 10,000-unit quantities.