International Rectifier Corp. (IR, El Segundo, CA) introduced the IRF7338, a 12V, complementary, n- and p-channel pair of HEXFET power MOSFETs in a single SO-8 package. The IRF7338 is suitable for use in instant power-up circuits for USB ports, double-data rate DRAM memory applications or other circuits requiring a single-pole double-throw (SPDT) device to switch between a standby voltage and a core voltage rail.
In double-data rate memory applications, the IRF7338, driven by a simple op-amp, can provide alternate source and sink paths for the termination terminal voltage. In USB applications, the new dual MOSFET can instantaneously switch the USB port between the 5V standby rail and the 5V core rail. In PCI applications, the IRF7338 can be used to switch between the 3.3V standby rail and the 3.3V core rail. The p-channel section is capable of switching currents of up to 3A, and the n-channel side is capable of switching up to 6.3A. Both the n- and p-channel devices have a low gate charge to simplify gate-drive circuitry.
The new IRF7338TR is now available. Pricing is $0.24 each in 10,000-unit quantities.
