Fairchild Semiconductor International (South Portland, ME) announced the FDZ299P, a new p-channel MOSFET with high-performance PowerTrench® technology housed in an ultra-small, 1.5mm x 1.5mm, ball grid array package. The FDZ299P is suitable for power management applications such as cell phones, PDAs, portable music players, GPS receivers and digital cameras.
The FDZ299P, at 80mW x 2.25mm² = 180, offers a 75% better footprint figure of merit compared to a standard TSSOP-6 device with a footprint figure of merit of 80mW x 9.0mm² = 720. The FDZ299P also reduces parasitic system power drain by providing low-loss switching (maximum steady-state current of 4.6A). The package height of the FDZ299P (maximum 0.8mm) allows the product to be used under RF shields and internal sub-assemblies and displays. In addition to packaging advantages, the new device provides low RDS(on) and low gate charge.
Available now, the FDZ299P is priced at $0.66 for 1,000 pieces, with delivery in eight weeks ARO.
