Fairchild Introduces PowerTrench N-Channel WL-CSP MOSFETs For Portable Applications

Fairchild Semiconductor introduced its N-Channel MOSFETs, the FDZ192NZ and FDZ372NZ, which the company says provide lower R_DS(ON) ratings, increasing efficiency and extending battery life, through the use of advanced PowerTrench® process technology.

Fairchild states that the FDZ192NZ and FDZ372NZ are the smallest and thinnest wafer-level chip-scale (WL-CSP) N-Channel devices in the industry. By using an advanced chip-scale packaging process, these devices provide significant space savings, critical for portable applications.

These advanced WL-CSP MOSFETs are said to represent a breakthrough in packaging technology, enabling devices to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge and low R_DS(ON), with guaranteed RDS(ON) ratings with V_GS as low as 1.5V. These devices offer human body model (HBM) ESD protection levels greater than 2200V.

The FDZ192NZ is housed in a 1.5 x 1.0mm package with 0.65mm thickness. The FDZ372NZ is housed in a 1.0 x 1.0mm package with an industry leading 0.4mm thickness. Compared to closest industry comparable devices, that are 1.6 x 1.6mm in size, the FDZ192NZ is 41% smaller, while the FDZ372NZ is 61% smaller and 40% thinner.

The units are priced as follows: FDZ192NZ at US$0.90 and FDZ372NZ at $0.80, with a delivery of 12 weeks.