Fairchild Debuts PowerEdge RF Power Amplifier Modules

Fairchild Semiconductor International Inc. (South Portland, ME) debuted its PowerEdge™ dual-band WCDMA/UMTS RF power amplifier modules (PAMs), which increase power-added efficiency to 42%. As the first third generation (3G) PAM to offer both 1,850 MHz to 1,910 MHz and 1,920 MHz to 1,980 MHz operation in a 3 mm x 3 mm LCC package, the RMPA2265 is approximately 44% smaller than alternative 4 mm x 4 mm packages.

The RMPA2265 addresses the high-efficiency, frequency flexibility and size requirements of today's 3G mobile handsets, PDAs and wireless PC data cards. The RMPA2265 is also compliant with the emerging High-Speed Downlink Packet Access standard. The RMPA2265's linearity and high-power-added efficiency are achieved through Fairchild's proprietary InGaP Heterojunction Bipolar Transistor technology. The device has selectable high-/low-power modes used to further optimize current consumption. The two-stage power amplifier internally matches both the input and output to 50 Ω to minimize the use of external components.

The lead-free RMPA2265 meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B, and is compliant with European Union requirements now in effect. Pricing is $0,98 for 10,000-piece quantities. Available now, delivery is six to eight weeks ARO.