New Industry Products

40V N-Channel Power MOSFET with 1.98mΩ RDS(on) Delivers COSS of 680pF

July 18, 2019 by Scott McMahan

Vishay Intertechnology introduces a new 40V TrenchFET® Gen IV n-channel power MOSFET designed to increase efficiency and power density in power conversion topologies. The Vishay Siliconix SiSS12DN delivers the lowest output capacitance (COSS) in the sub-2mΩ class and offers a low gate charge of 28.7nC.

Market applications for the MOSFET include synchronous rectification in ac-dc power supplies; primary- and secondary-side switching in dc-dc converters for telecom, server, and medical equipment; half-bridge power stages and buck-boost converters in voltage regulation for server and telecom equipment. Other typical uses include OR-ing functionality in telecom and server power supplies, power stages for switch capacitor or switch tank converters; motor drive control in power tools and industrial equipment; and battery protection and charging in battery management modules.

The MOSFET boasts on-resistance down to 1.98mΩ at 10V that minimizes conduction losses. A low COSS of 680pF and gate charge of 28.7nC reduce power losses from switching. It is offered in 3.3mm by 3.3mm PowerPAK 1212-8S package. The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

According to Vishay, the MOSFET has best-in-class COSS times on-resistance, a crucial figure of merit (FOM) for MOSFETs in power conversion designs that use zero-voltage-switching (ZVS) or switch-tank topology. Vishay says the component takes up 65% less PCB space than similar solutions in 6mm by 5mm packages, enabling higher power density.

The MOSFET simultaneously minimizes conduction and switching losses to enhance the efficiency of several power supply building blocks.

Key Specifications

  • Drain source voltage: 40V
  • RDS(ON) max. at:
    • 10 V: 1.98mΩ
    • 4.5 V: 2.74mΩ
  • COSS typical: 680pF
  • Gate charge: 28.7nC
  • Output charge typical: 28nC


  • Maximum on-resistance down to 1.98mΩ at 10V minimizes conduction losses
  • Low COSS of 680pF and gate charge of 28.7nC reduce power losses from switching
  • Offered in compact 3.3mm by 3.3mm PowerPAK 1212-8S package
  • 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free


Samples and production quantities of the SiSS12DN are available now, with lead times of 30 weeks subject to market conditions.