IXYS Corporation announced an expansion of its high-voltage power MOSFET product portfolio, the 2000V N-channel power MOSFETs. With a current rating of 1A, they are specifically designed for high-voltage, high-speed power conversion applications. Due to the positive temperature coefficient of their on-state resistance, these high-voltage power MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series connected devices and enabling cost-effective power systems.
Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability and PCB space saving. These new power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment and energy tapping applications from the power grid.
The 2000V Power MOSFETs are available in the following international standard size packages: TO-247, TO-247HV and TO-263HV. The latter two have increased creepage distances between leads, making them able to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV and IXTA1N200P3HV.
