1200V IGBTs Increase Power Density and Efficiency for Motor Drive and UPS Applications

International Rectifier Corp. (IR) today introduced a family of rugged 1200V ultra-fast insulated-gate bipolar transistors (IGBTs) optimized for industrial motor drive and UPS systems. The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode and featuring a 10us minimum short circuit time rating, the devices are optimized for rugged industrial applications.

“These new 1200V trench IGBTs feature very low Vce(on) and low switching losses while offering higher system efficiency and rugged transient performance for increased reliability making them well suited to harsh industrial environments,” said Llewellyn Vaughan-Edmunds, IGBT Product Marketing Manager, IR’s Energy Saving Products Business Unit.

The packaged devices cover a broad current range from 10 – 50A. Other key performance benefits include Tjmax of 150°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.

Pricing for the IRG7PH37K10D begins at US $3.85 each respectively in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant.