100V N-Channel Logic-Level Power FETs Rated to 70A

Toshiba Corporation's Storage & Electronic Devices Solutions Company today expanded its line-up of low-voltage N-channel power MOSFETs with the addition of 100V N-channel power MOSFETs supporting 4.5V logic level drive for quick chargers. The two new MOSFETs in the U-MOS VIII-H Series are the 70-Amp TPH4R10ANL and 45-Amp TPH6R30ANL.

Along with the spread and evolution of quick chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. The new MOSFETs utilize Toshiba’s low-voltage trench structure process to achieve the industry’s leading-class low on-resistance and high-speed performance. The structure lowers the performance index for “RDS(on) * Qsw”, improving switching applications. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency.

Also, support for 4.5V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system. Furthermore, the new products can respond to the high output and voltage power supplies required in USB 3.0 related applications. The new MOSFETs are suited for applications including quick chargers, switched-mode power supplies and dc-dc converters for servers and communication equipment.

The TPH6R30ANL features on on-resistance of 6.3mΩ (VGS=10 V) and 10.3mΩ (VGS=4.5V), Qg of 55nC, Qoss of 46nC, Qsw of 14nC, Ciss of 3300pF and is delivered in an SOP Advance package. The TPH4R10ANL features an on-resistance of 4.1 mΩ (VGS=10 V) and 6.6mΩ (VGS=4.5V), Qg of 75nC, Qoss of 74nC, Qsw of 21nC, Ciss of 4850pF and is delivered in an SOP Advance package.