IR Announces "Revolutionary" GaN-based Power Device Technology Platform; Details To Be Presented At DPF ‘08
International Rectifier Corp. (IR) announced the successful development of what it describes as a revolutionary gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances.
International Rectifier will introduce the new GaN-based power device technology platform at the Digital Power Forum ’08 in San Francisco, September 15-17, 2008.
The pioneering GaN-based power device technology platform is the result of five years of research and development by IR based on the company’s proprietary GaN-on-silicon epitaxial technology. IR states that its GaN-based power device technology platform enables revolutionary advancements in power conversion solution. The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s silicon manufacturing facilities, is said to offer customers a world-class, commercially viable manufacturing platform for GaN-based power devices.
"This leading-edge GaN-based technology platform and IP portfolio extends IR’s leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy," said IR’s President and Chief Executive Officer, Oleg Khaykin. "We fully anticipate the potential impact of this new device technology platform on the power conversion market to be at least as large as the introduction of the power HEXFET(R) by IR some 30 years ago. We believe that early adopters will be those market segments and applications that will take full advantage of the revolutionary capability of transforming the value realization of the key features of power density, power conversion efficiency and cost."