Dynex Power and University of Cambridge to Extend Collaborative Agreement
Dynex Power Inc. (Ottawa, Canada) announced the extension of a collaborative agreement for the design and development of advanced power electronic devices. This new collaboration builds on the development by the University of Cambridge (UK) of the trenchgate IGBT designs for Dynex that are set to become the company's net generation of high-performance IGBT components. This new research and development agreement will support the high-power semiconductor device research work of the University of Cambridge's research team, and supply new product technologies for the coming three years.
Michael LeGoff, president and CEO of Dynex, stated, "We are genuinely excited about the development process we have put in place with the University of Cambridge. This is exactly the type of clustering and collaboration we intend to pursue in Europe and North America to ensure our continued leadership in semiconductor products."