Diodes Announces Schottky Process Development

March 27, 2003 by Jeff Shepard

Diodes Inc. (Westlake Village, CA) announced the development of a breakthrough ultra-low leakage, high-voltage Schottky barrier rectifier process, which allows the company to offer Schottky barrier rectifier products with leakage current low enough to suit many high-efficiency, switch-mode power supply (SMPS) applications such as adaptors, desktops and server SMPS.

The low forward-voltage drop of the Schottky barrier rectifier makes it more efficient than traditional P-N junction devices such as ultra-fast recovery rectifiers. In addition, the lower forward drop of the Schottky device results in lower heat dissipation, which allows for greater miniaturization of portable products. The new products are also expected to have broad appeal in automotive applications where the low breakdown voltage of traditional Schottkys is not suitable due to temporary high voltage transients coming from inductive elements such as fans, solenoids and alternators.

"This breakthrough technology will allow Diodes to offer an expanded range of Schottky solutions to many of our SMPS customers," said Mark King, vice president of sales and marketing at Diodes. "The low forward-voltage drop of the Schottky device allows our customers to boost their power supplies' overall efficiency and gain a competitive edge. This in turn, will allow us to displace lower ASP P-N junction ultra-fast devices with higher-margin Schottky products."