Vishay Intertechnology Inc. (Malvern, PA) announced its new TSDF2005W and TSDF2020W bipolar RF transistors with a 25GHz transition frequency and excellent dynamic performance. The new silicon NPN planar transistors are designed to serve as RF front-ends for analog and digital wireless communication systems up to 3GHz, including cordless phones, pagers and wireless network equipment, as well as television and satellite tuners, GPS systems, and high-frequency oscillators up to 12GHz.
The TSDF2005W and TSDF2020W RF transistors feature low noise figures of 1.2 dB and 1.1dB, and very high-power gain values of 21dB and 20dB, respectively, providing enhanced dynamic performance in applications with up to 3GHz operating frequencies. The 5mA TSDF2005W and 20mA TSDF2020W offer collector-base capacitances of 0.05pF and 0.15pF, and a typical transducer gain of 17dB. Both devices also feature low feedback capacitance.
The devices’ compact, plastic, surface-mount, SOT343 package measures just 2.05mm x 1.25mm x 1.0mm, and features emitter pins that also serve as thermal leads. Each RF transistor is rated for a collector-base voltage of 10V, a collector-emitter voltage of 3.5V and an emitter base voltage of 1.5V. The TSDF2005W features a collector current of 12mA and total power dissipation of 40mW at an ambient temperature of +132 degrees C or less. The TSDF2020W features a collector current of 40mA and maximum total power dissipation of 200mW at an ambient temperature of +60 degrees C or less. The TSDF2005W and TSDF2020W are rated for a maximum junction temperature of +150 degrees C and a storage temperature range of -65 to +150 degrees C.
Samples and production quantities of the TSDF2005W and TSDF2020W are available now, with lead times of four to eight weeks for larger orders. Pricing for delivery in 100,000-piece quantities starts at $12 per 100 pieces.
