IXYS Integrates Powerful Driver IC and Power MOSFET in One Device for RF and Power Pulse Applications

IXYS Corp. announced that its IXYSRF team and wholly-owned subsidiary, Directed Energy, Inc., has developed a new high efficiency combination RF driver and Power MOSFET in one package. The driver and MOSFET are integrated into an isolated, surface mountable and low inductance RF package. The combination can be operated up to frequencies as high as 40MHz switching operation for class C, D and E modes.

"This product demonstrates our high power and high frequency integration capabilities that integrate our driver IC, the "515", with our high frequency power MOSFET, in our isolated DCB based RF power plastic SMD package," said Dr. Nathan Zommer, CEO of IXYS.

By directly connecting the driver to the MOSFET in a single package, the problems of matching the driver to the MOSFET are eliminated. The IXZ4DF18N50 contains a MOSFET rated at 19A, 500V coupled with the DEIC515 driver IC for short propagation delays and accurate switching thresholds. The DEIC515 has been designed with very low propagation delays (about half of standard drivers), with fast switching and high drive current. The propagation delay (approximately 17 ns) is reduced by eliminating the level translator in the input circuit. The driver section can be operated from 8 to 24V. Rise and fall times of less than 2 ns have been observed into a 50Ω load making the part useful for high power short pulse and switching applications.

The SMD package of the IXZDF18N50 is claimed to be a robust high power package, with excellent thermal performance, electrical isolation, and excellent thermal power cycling capability, outperforming the common ceramic and more expensive hermetic RF packages. Additional parts with other current and voltage ratings will be added in the future.