IXYS Corp. announced the expansion of its family of GenX3 Insulated Gate Bipolar Transistors (IGBTs) to 600V. Manufactured using IXYS’ robust HDMOS IGBT process, these medium speed IGBTs are optimized for high current applications requiring soft switching frequencies upwards of 200 kHz and hard switching frequencies of 40 kHz. These devices utilize the IXYS Punch-Through (PT) technology, providing higher surge current capabilities, lower saturation voltage and lower energy losses, and said to offer designers a new viable option for switching applications at the 600V range.
These devices will also be co-packed with IXYS’ HiPerFRED™ diodes offering what is described as excellent fast recovery due to low reverse recovery charge (Qrr), which is said to further improving power switching performance. The square reverse bias safe operating area (RBSOA) featured in the 600V GenX3 IGBT improves maximum clamped inductive load current allowing the device to safely operate in snubberless hard switching applications.
GenX3 600V IGBTs are said to bring many technical benefits and cost savings to a large number of applications particularly in the area of welding, motor drive and induction heating. Common applications include power factor correction circuits, uninterruptible power supply systems, switch-mode power supplies, (induction, dc, BLDC) motor drives, high frequency inverters, solar power inverters and battery chargers.
Products are offered in various standard packages, including the full spectrum of surface mount and discrete packages (TO-263 to TO-268, TO-220 to SOT-227) with collector current ratings from 28A to 200A. They will also be offered in IXYS’ ISOPLUS™ packaging providing high isolation capability (up to 2500V) and superior thermal performance. Initial device offerings include part numbers IXGH28N60B3D1, IXGH36N60B3D1, IXGH48N60B3, IXGH56N60B3D1, IXGX64N60B3D1, IXGH72N60B3, and IXGN200N60B3.
