IR Announces New DirectFET MOSFET For Active O-Ring & Hot Swap Applications

International Rectifier (IR)® introduced the IRF6718 DirectFET® MOSFET. The new 25V device offers the industry’s lowest on-state resistance (RDS(on)) and is optimized for dc switch applications such as active O-Ring, hot swap, and electronic fuse (E-fuse).

The IRF6718 features IR’s latest generation silicon technology in a new large can DirectFET package to deliver an extremely low RDS(on) of only 0.5mΩ (typical) at 10V Vgs in a 60% smaller footprint and 85% lower profile than a D2PAK. The new device is said to significantly reduces conduction losses associated with the pass element to dramatically improve the efficiency of the entire system.

"The IRF6718 is IR’s first device hosted in a large can DirectFET package. Its significantly lower RDS(on) compared to competing devices achieves superior efficiency and thermal performance for high density dc-dc applications such as servers in a smaller footprint than a D2PAK. Moreover, board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss," said George Schuellein, Marketing Director, IR’s Multiphase Products, Enterprise Power Business Unit.

In addition, the IRF6718 provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits. The device is offered lead free and is RoHS compliant.

The IRF6718 is an expansion of IR’s 25V DirectFET family targeting dc switch applications. The IRF6717 medium can and IRF6713 small can DirectFETs also target dc switch applications and provide industry best RDS(on) within their respective PCB footprints.

Pricing for the IRF6718L2TR1PbF begins at US $1.50 each in 10,000-unit quantities.