Hitachi Ltd. (Tokyo, Japan) announced it new HAT1072H p-channel power MOSFET, which features about 40 percent less on-resistance compared to the company's previous model. The device is targeted at power-control and over-charge/discharge-protection circuits used in portable information devices such as notebook PCs.
The new MOSFET exhibits an on-resistance of only 3.6 milliohms, with a breakdown voltage of -30V. It is housed in a small, thin LFPAK package, which has the same mounting area as an SOP-8, measuring 5.3mm x 6.2mm x 1.1mm. The higher cell density was achieved through the use of a 0.3µm process, and cell structure optimization was implemented to enable low on-resistance.
The HAT1072H is priced at $1.65.
