Diodes Inc. Releases Dual Self-Protected MOSFETs for Complete Protection & Greater Thermal Efficiency
Optimized for use in the harshest electrical environments, dual self-protected low side MOSFETs from Diodes Inc. are said to provide automotive and industrial applications with enhanced levels of circuit protection and improvements in overall circuit reliability. With an Rthj-a rating of 95OC/W, these SM8 packaged devices are said to offer a thermal efficiency that is 30% better than that of alternative SO8 packaged devices, ensuring cooler running.
The latest additions to the IntelliFET® product line, the space saving 60V rated N-channel ZXMS6004DT8 and ZXMS6005DT8 integrate over-temperature, over-current, over-voltage and input ESD protection on each of their two independent and isolated switching channels. The MOSFETs handle nominal load currents of 1.2A and 1.8A respectively and present on-resistances of only 500m<ohm> and 200m<ohm>. Both devices have an inductive clamping energy rating of 210mJ.
Two additional single channel devices have also been announced by Diodes, the ZXMS6005DG and ZXMS6005SG, offering the same level of protection as the duals and providing what the company says is a cost effective alternative to competing single channel self protected MOSFET solutions.
The ZXMS6004DT8 and ZXMS6005DT8 dual self protected MOSFETs are priced at $0.35 and $0.40 USD respectively in 10,000 quantities; the single channel ZXMS6005DG and ZXMS6005SG devices are both priced at $0.30 in 10,000 quantities.
