500V MOSFETs target Lighting and Consumer Devices

With an RDS(on) of 0.350Ω (maximum), excellent performance in terms of trr (190ns typical), Qrr (1.111µC typical) and smooth soft switching behavior, the new 500V MDmesh DM2 fast recovery diode MOSFETs from STMicroelectronics, the STD12N50DM2 and STF12N50DM2, are designed to improve power converter efficiency. Housed in DPAK and TO-220FP packages, they are suited for home appliance and consumer applications (full bridge topology) and for lighting (LED drivers) applications based on LLC topology.

The latest MDmeshâ„¢ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies. ST is addressing the challenge of delivering power conversion for home appliances, consumer devices and LED drivers with their best power-density solution, which combines the most advanced power-transistor structure with a compact, cost-effective packaging.

ST's new power-transistor family comprises a wide range of super-junction Power MOSFETs with integrated fast-recovery diodes and breakdown voltages up to 650V. The combination of technical parameters - low gate charge, input capacitance and resistance, fast recovery phase of the intrinsic diode, very low recovery charge (Qrr) and recovery time (Trr) and the industry's best soft-switching performance - place the new devices ahead of competitive offerings.