30V MOSFETs feature less than 1 milliOhm On-Resistance

Advanced Power Electronics Corp. (USA) has released the new AP1A003GMT-HF-3 30V power MOSFET with a maximum on-resistance of only 0.99mΩ for use in high current load switching where a very low voltage drop across the MOSFET switch is required to minimize the conduction losses. Provided in a PMPAK 5x6 package with integrated thermal pad and with a standard SO-8 footprint compatible with other enhanced 5x6mm power packages.

The AP1A003GMT-HF-3 power MOSFET features simple gate drive requirements, a breakdown voltage rating of 30V, a maximum drain-source current rating of 260A, and a maximum pulsed drain current rating of 300A with the pulse width limited by the maximum junction temperature rating. The PMPAK 5x6 package has maximum thermal resistances of 1.2 degrees C/W junction-to-case, and 25 degrees C/W junction-to-ambient.

With a 5V gate drive, the maximum on-resistance of these MOSFETs rises to 2 milliOhms. The total gate charge of these devices is 70 nC typical and 112nC maximum with a drain current of 25A. The gate-drain (“Miller”) capacitance is 30 nC (typical) with VGS = 4.5V and the typical gate-source capacitance is 30 nC with VDC = 15V. The fall time with VGS = 10V is rated at 60 ns. The forward on-state resistance of the source-drain diode is 1.2V maximum with IS = 20A and VGS = 0V; the reverse recovery time of that diode is 40 nS with IS = 10A and VGS = 0V and the typical reverse recovery charge is 100A/usec with a dI/dt = 100A/usec.The AP1A003GMT-HF-3 power MOSFET is fully RoHS-compliant and BFR/halogen-free. Samples are available now.