The Efficient Power Conversion (EPC) team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2020 in New Orleans from March 15th through the 19th (See detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in booth #1847.
EPC will be launching the ePower™ Stage IC family that redefines power conversion by integrating all functions in a single GaN-on-Si integrated circuit. EPC will show how ePower™ Stage and discrete GaN devices increase the efficiency, shrink the size, and reduce system cost for 48V power conversion with demonstrations for ultra-thin, high powered (up to 250W) laptop computing, high density server and Artificial Intelligence (AI) systems, as well as automotive systems.
Lidar/Time of Flight
Multiple lidar applications will show how GaN technology supports both short and long range lidar sensors. For long-range direct time of flight (DToF) systems, a demonstration providing currents greater than 100A in under 2.5 nanoseconds will be shown.
For short-range indirect time of flight (IToF) systems, a demonstration providing an 8A pulse with pulse widths less than 1.2 nanoseconds will be on display, as well as multiple end-customer systems in production today. These systems are being deployed today for applications as varied as autonomous vehicles, warehouse automation, drones, to gaming and vacuum cleaners.
Motor Drive
The new monolithic GaN IC power stage will be shown powering the motor of an e-scooter. The ePower™ Stage device is employed in a 3-phase sinusoidal excitation, 10 ARMS per phase motor drive for an efficient, quiet, high performance, and low cost solution to emobility.
Wireless Power
The emergence of LTE/5G systems will enable IoT to grow rapidly, pushing a multitude of new connections and sensors into the ecosystem. For these devices to scale with 5G, they will need dependable, safe, wireless power. EPC will demonstrate highly efficient wireless power solutions for 5G that are capable of transmitting up to 65W through both e-glass and walls.
Technical Presentations Featuring eGaN FETs and Integrated Circuits by EPC Experts:
Tuesday, March 17th
- The Path Forward for GaN Power Devices
- Presenter: Alex Lidow, Ph.D.
- Schedule: 9:20 am – 9:45 am (IS04, Location R06)
- Silicon is Dead…and Discretes are Dying
- Presenter: Alex Lidow, Ph.D.
- Schedule: 3:00 pm – 3:15 pm (Ridley Engineering Presents, Booth 1517)
Wednesday, March 18th
- Cost Effective Time of Flight (ToF) Using GaN Devices
- Presenter: John Glaser, Ph.D.
- Schedule: 8:30 am – 8:55 am (IS08, Location R02-R03)
- An Ultra-Thin 48V to 20V, 250W DC-DC Converter Using GaN FETs and Digital Control
- Presenter: Jianjing Wang, Ph.D.
- Schedule: 9:20 am – 9:45 am (IS07, Location R04-R05)
- Design Optimization for a GaN FET-Based Three-Level Synchronous Buck Converter
- Presenter: Jianjing Wang, Ph.D.
- Schedule: 9:50 am – 10:10 am (T12, Location 206-207)
- eGaN® Technology and the Future of Power Conversion
- Presenter: Alex Lidow, Ph.D.
- Schedule: 1:00 pm – 1:30 pm (Exhibitor Seminar, Theater 1)
Thursday, March 19th
- Extreme Reliability and Test to Fail Methodology for GaN Devices
- Presenter: Alex Lidow, Ph.D.
- Schedule: 8:30 am – 8:55 am (IS23, Location R07)
- A Monolithic GaN Half-bridge IC for High-Frequency Power Converters
- Presenter: Jianjing Wang, Ph.D.
- Schedule: 8:55 am – 9:20 am (IS19, Location R04-R05)
- The Path to a Power Conversion System on a Chip – one GaN Stage at a Time
- Presenter: Ravi Ananth
- Schedule: 9:45 am – 10:10 am (IS20, Location R02-R03)
- GaN FETs for Lidar Cameras and Other Low Voltage, Very High Frequency, Ultrafast Pulse Power Applications
- Presenter: John Glaser, Ph.D.
- Schedule: 1:45 pm – 2:10 pm (IS26, Location R02-R03)
- GaN Integration – Breaking Down Technical Barriers Quickly
- Presenter: Ravi Ananth
- Schedule: 2:10 pm – 2:35 pm (IS30, Location R08)
