GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its…
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.
Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.
Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in upcoming acquisitions later…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese Original Equipment…
ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote…
ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote world-wide market adoption of SiC…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development of electric vehicle…
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
The Yutong Group partnered with Cree and StarPower to create China’s first electric bus using next-generation silicon…
The Yutong Group partnered with Cree and StarPower to create China’s first electric bus using next-generation silicon carbide technology.
Atom Power, a fast-growing startup based in Charlotte, North Carolina, recently closed on a $17.75 million Series B…
Atom Power, a fast-growing startup based in Charlotte, North Carolina, recently closed on a $17.75 million Series B funding round to commercialize…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for electrical vehicles.
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy…
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy Challenge Fund.
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium…
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can…
Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers…
Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers demonstrated how to precisely…
With a fresh round of seed funding and plans for a pilot plant, U.K. gallium nitride startup Porotech is making strides…
With a fresh round of seed funding and plans for a pilot plant, U.K. gallium nitride startup Porotech is making strides to bring its porous GaN…
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