Weekly Power Product RecapMay 27, 2020 by Alessandro Mascellino
This article highlights products from ROHM, Infineon, AOS, GaN Systems, Diodes Incorporated, and Traco Power.
This week’s product roundup showcases components for a variety of power applications. However, from this last week's product announcements we found a focus on the development of components for the automotive industry here, with LED drivers and MOSFETs being a few of the big product topics.
ROHM Introduces BD18336NUF-M LED Driver
These new components from ROHM are designed to provide stable lightning even in the event of battery voltage drops on a single chip. Because of this, the BD18336NUF-M LED drivers are ideal for applications within the automotive industry, where LEDs are gradually replacing filament lamps, both for their longer life and high-density mounting.
Daytime Running Lamps (DRL) and position lighting to rear lamps, in particular, have started utilizing LED bulbs with Socket-type LED lamps for their superior maintainability. In order to decrease socket size while retaining design flexibility, ROHM has developed the BD18336NUF-M to achieve a high output of 600mA in an ultra-compact 3.0mm square package.
Image used courtesy of Rohm.
The component is also equipped with a current bypass function that prevents LED turn-OFF and maintains a brightness of at least 30% at all times by switching the LED current path.
Samples of the BD18336NUF-M LEDs are already available, while OEM production will start in July 2020.
1200V αSiC MOSFETs From Alpha and Omega Semiconductor
Specifically designed for the automotive and industrial markets, these new 1200V silicon carbide (SiC) αSiC MOSFETs by Alpha and Omega Semiconductor (AOS) aim at enabling customers to achieve higher levels of efficiency and power density compared to traditional silicon solutions.
The components minimize both AC and DC power losses through a low gate resistance (RG), and their αSiC technology means they can achieve the highest efficiencies across a wide
range of applications by switching frequencies and temperatures.
Image used courtesy of Alpha and Omega Semiconductor
The first product released by AOS for this new platform is the AOK065V120X2 (pictured above), a 1200V 65mΩ SiC MOSFET available in a TO-247-3L package.
For maximum compatibility with existing high voltage IGBT and SiC gate drivers, the component can be driven via a -5V/+15V gate drive, as well as with a unipolar drive in optimized system designs.
AOS said the new αSiC MOSFET portfolio will expand later this year to include a broader range of on-resistance and additional package options.
In the meantime, you can check out the full specification of AOK065V120X2 and order the components here.
Modular Evaluation Platform for Discrete CoolSiC MOSFETs From Infineon
Image used courtesy of Infineon.
Developed to simplify double pulse testing of power devices, the new evaluation platform by Infineon is expressly built to test-drive options for the 1200 V CoolSiC™ MOSFET in TO247 3-pin and 4-pin packages.
The platform comprises a motherboard with interchangeable drive cards, whose options include a drive including a Miller clamp and a bipolar supply card. The motherboard is split into two sections, and the primary supply side allocates a12 V supply and a pulse-width modulation (PWM) connector.
The secondary side, on the other hand, features the secondary supply of the driver, the half-bridge with connections for the shunt for current measurement, and the external inductance.
The positive operating voltage of the drivers can be regulated between +7.5 and +20 V, whilst the negative voltage can be adjusted between +1 V and -4.5 V.
The platform’s motherboard was designed for a maximum voltage of 800 V and a maximum pulse current of 130 A, but measuring of higher temperatures of up to 175°C is possible if the heatsink is used together with a heating element.
Designed to shorten time-to-market for a variety of applications, Infineon’s new solution aims at paving the way for silicon carbide to become mainstream.
The motherboard and drive cards are already available at this link.
DMN3012LEG Power Block MOSFET from Diodes Incorporated
The first in a new generation of discrete MOSFETs, the DMN3012LEG integrates dual MOSFETs in a single package.
With its 3.3mm x 3.3mm dimensions, the DMN3012LEG reduces the board space requirement by up to 50% when compared to typical two-chip solutions. This allows the component to be utilized in a variety of applications where space-saving needs are a necessity, including point of load (PoL) and power management modules.
The DMN3012LEG also uses a lateral diffused MOS (LDMOS) process, combining fast turn-on and turn-off delay speeds of 5.1nS and 6.4nS for Q1, and 4.4nS and 12.4ns for Q2.
Image used courtesy of Diodes Incorporated.
In addition, the device has a maximum on-resistance of 12mΩ at Vgs=5V for Q1 and 6mΩ at Vgs=5V for Q2. It can also accept a 30V drain-source voltage with 10V gate-source while supporting a 5V gate drive.
Interested in the new MOSFET by Diodes? The component is already available for $0.589 in packages of 1000 pieces.
TEA series DC/DC SIP converters From Traco Power
This new line of unregulated 1 Watt DC/DC SIP converters is specifically designed to offer a low-cost solution while keeping a high-quality standard according to Traco Power.
Image used courtesy of Traco Power.
This new line of unregulated 1 Watt DC/DC SIP converters is specifically designed to offer a low-cost solution while keeping a high-quality standard.
The TEA Series from Traco Power features an operating temperature range from –40°C to 85°C without eating. It also offers I/O-isolations of either 1’500 or 4’000 VDC, enabling the component to be utilized in a variety of applications.
The TEA Series is available in three variants: TEA 1, TEA 1E, AND TEA 1HI.
Did we miss any power products you're excited to work with? Let us know your thoughts with a comment below.