STMicro Introduces µΩ Power MOSFET For Paralleled Server Power Supplies

STMicroelectronics (ST) announced a new power MOSFET – the STV300NH02L – featuring what is described as exceptionally low, µΩ ON-resistance to reduce losses and increase efficiency in demanding power supply systems. This new high-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

ST has developed what it describes as an innovative ribbon-bonding technology that delivers a low typical Rds(on) of 800µΩ, which the company claims sets a new industry benchmark for high-current MOSFETs. The 20V device, which is also suitable for reducing secondary rectification losses in high-efficiency dc-dc converters, are said to provide excellent protection under short-circuit conditions, with a very low turn-off time.

Paralleling of power supplies is frequently used to provide redundancy in critical systems or to increase capacity. Originally, diodes were used for this function, but ST claims that they have been replaced by MOSFETs to achieve higher performance. Now, the very low losses of the STV300NH02L are claimed to deliver a further significant step forward in power-supply efficiency.

The STV300NH02L is available now in a PowerSO-10 package, priced at $4.50 in quantities of 1000 pieces.