Low Rds(on) N-Channel FETs for Mobile Device Load Switches

Toshiba Corporation's Storage & Electronic Devices Solutions Company today announced the launch of N-channel MOSFETs for load switches in mobile devices, including smartphones and tablets, that claim the industry's leading-class low on-resistance. Shipments of the new products start from today.

The new product line-up consists of the 30V SSM6K513NU and the 40V SSM6K514NU. By utilizing Toshiba’s latest U-MOS IX-H series trench process, the new MOSFETs achieve low on-resistance: 6.5mOhm for SSM6K513NU and 8.9mOhm for SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% against Toshiba existing products.

The MOSFETs are suitable for use in electric power switching applications of over 10W, including small-size mobile devices that meet the USB Type-CTM and USB Power Delivery (PD) standards, and contribute to high system efficiency and low power consumption. The 15A/30V SSM6K513NU and the 12A/40V SSM6K514NU are both delivered in a SOT-1220 package.