IXYS Introduces Half-Bridge MOSFET Modules In ISOPLUS i4-PAC™
IXYS Corp. announced the release of half-bridge MOSFET modules that are available in IXYS’ proprietary ISOPLUS i4-PAC™ packaging. The company claims that these modules provide unsurpassed thermal performance and temperature cycling capabilities making them suitable for applications implementing heat sink grounding techniques. These devices are also suitable for designers who seek isolated half-bridge configurations integrated into one single package avoiding the use of multiple discrete devices thus promoting critical board layout space savings.
The i4-PAC™ is a UL recognized isolated package incorporating a direct copper bond (DCB) ceramic isolator which provides 2500Vrms isolation with superior thermal performance. According to the company, in comparison with conventional package housings, the ISOPLUS i4-PAC yielded as high as a 45% decrease in thermal resistance. These modules exhibit excellent switching behavior due to low inductive current paths as dice are located within one package. An additional feature includes a reduction in EMI emissions due to the low coupling capacitance between die and heat sink. These half-bridge modules take full advantage of technology platforms commonly implemented in both the IXYS Trench and Polar discrete MOSFET product families.
These new modules are currently available in two configurations. One configuration (part number prefix denoted as FMP) combines carefully selected P-Channel and N-Channel MOSFETs configured in a phase-leg or half-bridge topology with a common drain arrangement. An added benefit from this configuration is the elimination of gate drive circuitry normally required in driving an N-Channel MOSFET on the high-side of a phase leg, resulting in a component count reduction, thus improving drive circuit simplicity, space savings and over-all component cost. The other configuration (part number prefix denoted as FMM) is comprised of two N-Channel MOSFETs situated on both the low and high side of the phase leg.
The Dual N-Channel FMM modules are capable of accommodating drain to source breakdown voltages of 200, 250, 500 and 600V with drain current values from 12 to 33A. The P&N FMP modules are available to support applications requiring drain to source breakdown voltages of 100, 150 and 200V with drain current ratings from 17 to 54A.
