IGBTs Designed for Rugged, High-Power Switching Requirements
With features and ratings that meet demanding high-power switching design requirements, Bourns’ discrete IGBTs are optimal advanced power-efficient solutions.
By combining a MOSFET gate and the collector-emitter structure of a power BJT, Bourns® BID Series Discrete IGBTs provide versatile switching functions for high voltage and high current applications. Utilizing advanced TrenchGate Field-Stop (TGFS) technology enables greater control of the dynamic characteristics, which results in lower collector-emitter saturation voltage (VCE(sat)) and lower switching losses. These lower losses – together with advanced thermally-enhanced packaging techniques – deliver state-of-the-art reliability and thermal performance for even the highest power range switching designs. Moreover, Bourns’ IGBTs are co-packaged with a Fast Recovery Diode (FRD) to deliver still greater power conversion efficiency for lower transient voltage surges.
Image used courtesy of Bodo’s Power Systems [PDF]
Designed to provide reliable performance in rugged environments, Bourns IGBTs are excellent choices to enable smaller, lighter weight designs. For example, Uninterruptable Power Supplies (UPS), switch-mode power supplies (SMPS), power factor correctors (PFC), photovoltaic (PV) converters, frequency changing equipment, induction heating, motor controls, welding, grinding/sanding tools, and other power switching applications can be designed smaller that results in lower bill of material (BOM) costs.
And, because Bourns’ IGBTs help achieve more efficient designs that waste less energy, these more compact applications can be designed with smaller and less expensive heat sinks. Bourns® IGBTs are also versatile and cost-efficient solutions for many circuit functions that have diverse switching circuit topologies and widely varying current and voltage requirements.
In addition, Bourns IGBTs are particularly well-suited for controlling motors in electric vehicle, pump, and fan applications due to their advanced short circuit protection structure and robust safe operating area (SOA). By supporting a simplified and smaller heatsink design because of their lower power loss and higher thermal conductivity, these features make Bourns’ IGBTs optimal solutions for many UPS functional blocks commonly found in data server installations, network and communication hub facilities, and at industrial manufacturing plants for powering industrial robotic operations and their communication networks.
The Model BID Series discrete IGBTs offer withstand voltages of 600 and 650 Volts and continuous collector current at 100°C from 5 to 50 Amps. The surface mount and through-hole packages allow total power dissipation of 82 to 416 Watts. With these features and others, Bourns® IGBTs give designers the rugged, reliable, cost-effective switching performance needed for their next-generation designs. Importantly, Bourns offers shorter, dependable lead times that provide an extra measure of peace of mind throughout a complex design/qualification cycle and after systems are deployed in the field.
Manufactured to IEC standards, the key design specifications for Bourns’ IGBTs are highlighted below:
| Part Number | Vce max. (V) | Ic max. @ Tc=100˚C (A) | Ptot max. @ Tc=25˚C | Package |
| BIDW20N60T | 600 | 20 | 192 | TO-247 |
| BIDNW30N60H3 | 600 | 30 | 230 | TO-247N |
| BIDW30N60T | 600 | 30 | 230 | TO-247 |
| BIDW50N65T | 650 | 50 | 416 | TO-247 |
| BIDD05N60T | 650 | 5 | 82 | TO-252 |
This article originally appeared in Bodo’s Power Systems [PDF] magazine.
