Diodes Inc. Introduces New Dual MOSFET Combination

Diodes Inc. introduced a complementary pair of 100V enhancement mode MOSFETs in an SO8 package that is said to achieve the same performance as that of much larger individually packaged parts. The ZXMC10A816 is aimed at H-bridge circuits in dc fan and inverter circuits, Class D amplifier output stages, and an array of 48V applications.

Enabling designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count as well as simplifies gate drive circuit layouts. As an illustration of its space saving potential, the SO8 package’s footprint of just 31mm² is only 30% that of two SOT223 MOSFETs.

The N- and P-channel MOSFETs used in the dual device package exhibit low gate charge and typical R_{_DS(ON)} of 230 and 235m , respectively, at V_{_GS} of 10V, ensuring that switching and on-state losses are minimized. Both 2.4 and 2.6W are respective power dissipation figures.