Cree’s New GaN HEMT Optimized for North American WiMAX Applications
Cree, Inc. announced that it is shipping sample quantities of its new 15W packaged gallium nitride (GaN) high electron mobility transistor (HEMT) – the CGH27015. Optimized for high efficiency, high gain and wide bandwidth, Cree's CGH27015 is designed to provide ample linear power and efficiency for North American WiMAX and broadband wireless access applications operating between 2.3 and 2.9 GHz.
The CGH27015 typically produces 2.5W of average output power and 24% drain efficiency over the frequency range of 2.3 to 2.9 GHz. This represents up to 30% improvement in device efficiency when compared with traditional technologies such as silicon LDMOS or GaAs under WiMAX signals and requirements (802.16-2004). It also features 14.5 dB of small signal gain and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28V.
"The release of the CGH27015 demonstrates Cree's continued commitment to provide a comprehensive line of high-performance GaN RF products for the WiMAX and broadband wireless access markets," said Jim Milligan, Cree Product Manager for Wide Bandgap Radio Frequency Products. "GaN is an ideal material for applications that operate under high-power conditions and must meet high efficiency and stringent linearity requirements, like WiMAX and other applications operating between 2.5 and 6 GHz."
