APT Announces SiC Zero Recovery Schottky Diodes
Advanced Power Technology Inc. (APT, Bend, OR) announced its new product line of silicon carbide (SiC) Zero Recovery™ Schottky diodes in plastic and hermetic packages, which include D2, D3, TO-220, TO-247 and SOT-227, as well as hermetic TO-257, TO-254 and TO-258 packages. Available in 600 V and 1,200 V breakdown voltages, configurations include single discrete devices, multi-die discrete devices and center-tap devices.
The SiC Zero Recovery™ Schottky diodes feature switching speeds up to 500 kHz, a three-percent to seven-percent reduction in poser-factor correction power consumption, high thermal conductivity, a 175 °C rating for higher temperature operation, low leakage at elevated temperature; easy paralleling due to negative temperature coefficient, and a 600 V to 1,200 V breakdown voltage.
Applications for the devices include power-factor correction, switch-mode power supplies, motor controls, uninterruptible power supplies and inverters. Hermetic parts are used in aerospace and military applications, or other harsh environmental applications. Parts are available with and without Mil-Prf-19500-type screening. Samples are available now as well as high-volume production.
