100V / 1.92mΩ N-Channel Power MOSFET for 48V Automotive Systems

Toshiba Electronic Devices & Storage Corporation has released the XK1R9F10QB, a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as load switches, switching power supplies and motor drives. Shipments start immediately.

The new product is the first in Toshiba’s new U-MOS X-H Series of MOSFET with a trench structure, and is fabricated with the company’s latest generation process. Mounted on a low-resistance TO-220SM(W) package, it delivers industry-leading low on-resistance, with a maximum on-resistance of 1.92mΩ, an approximate 20% reduction against Toshiba’s current TK160F10N1L.

This advance helps to reduce equipment power consumption. It also delivers reduced switching noise, due to optimization of capacitance characteristics, which helps to reduce EMI of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel.

Features

• U-MOS X-H Series MOSFET with a trench structure
• Industry-leading low On-resistance
  • RDS(ON)=1.92mΩ (max) ＠VGS=10V
• AEC-Q101 qualified

Main specifications (click on table to enlarge)