TriQuint Semiconductor Inc. (Hillsboro, OR) announced the introduction of its high-volume, TQHBT3 InGaP, hetero-junction bipolar transistor (HBT) process fabricated in its 150 mm Oregon wafer manufacturing facility. The process enables designers of RF amplifiers for cellular phone, WLAN, WiMax and broadband power applications to achieve increased gain, power level and efficiency for a given device size due to higher transistor performance.
"The TQHBT3 process offers our foundry customers improved performance for several key parameters important for their power amplifier applications," said Rob Christ, TriQuint's foundry marketing director. "The TQHBT3 features higher beta, more gain per stage, improved power added efficiency and world-class ruggedness."
