MagnaChip Semiconductor Corporation today announced that it now offers a new 0.35um silicon-on-insulator (SOI) based Bipolar-CMOS-DMOS (BCD) high voltage process. This new process features 8V to 16V fully-isolated high-voltage devices that are implemented on SOI substrates for applications that include audio amps, dc-dc converters, and power management ICs (PMICs) for the mobile and consumer markets. This process also supports standard 3.3V and 5V CMOS digital, mixed-signal and analog devices.
The high-voltage 8V to 16V devices are optimized to have low Rsp (specific on-resistance) and low capacitance, for applications requiring power stages. Integrating CMOS and high voltage devices on SOI substrates with deep trench isolation (DTI) offers minimum isolation and device area, minimum substrate leakage, improved radiation hardness and high-temperature operation. This enables the design of PMICs with unipolar or bipolar supplies (positive and negative supply rails), with latch-up free operation.
"We are very pleased to offer our new 0.35um BCD high voltage process solution based on silicon-on-insulator substrates," said Namkyu Park, Senior Vice President of Marketing for MagnaChip's Semiconductor Manufacturing Services Division. "We intend to expand our SOI based BCD portfolio with additional voltage ratings to continue to support the growing applications that can benefit from the isolation feature of this process."
