Inotera Memories Inc., a joint venture between Infineon Technologies AG (Germany) and Nanya Technology Corp., announced the inauguration of its 300 mm DRAM facility. The first DRAM chips using 110 nm trench technology are already rolling off the new production site located at HwaYa Technology Park, Taiwan. Inotera puts total capacity for the plant at more than 50,000 wafer starts per month when fully operational.
Inotera's major production volume of memory products will contribute to Infineon and Nanya, and help each partner to expand its position in the DRAM market. The 300 mm fab will be equipped in two stages, the first of which has been completed with more than 20,000 wafer starts per month planned by the end of 2004. Completion of the second stage, which will see capacity jump to the 50,000 range, is expected by the end of 2005. At that time, employee headcount is also expected to increase from 1,100 now to 1,600, and 2005 will also see a transition to 90 nm from 110 nm production.
