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Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

News Oct 05, 2017 by Paul Shepard
GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

News Oct 03, 2017 by Paul Shepard
PPM Power Signs Power Modules and SiC Agreement with SanRex

PPM Power Signs Power Modules and SiC Agreement with SanRex

News Sep 30, 2017 by Paul Shepard
Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

News Sep 27, 2017 by Paul Shepard
Mitsubishi Develops SiC Power Device with Record Power Efficiency

Mitsubishi Develops SiC Power Device with Record Power Efficiency

News Sep 21, 2017 by Paul Shepard
GaN FETs enable Reimagining Servos through Redesigned Power Electronics

GaN FETs enable Reimagining Servos through Redesigned Power Electronics

News Sep 20, 2017 by Paul Shepard
GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

News Sep 19, 2017 by Paul Shepard
Ascatron enters SiC Power Device Market with Diodes up to 10kV

Ascatron enters SiC Power Device Market with Diodes up to 10kV

News Sep 18, 2017 by Paul Shepard
SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition

News Sep 14, 2017 by Paul Shepard
GaN-based High-Power, Near Field WattUp Charging Solution

GaN-based High-Power, Near Field WattUp Charging Solution

News Sep 07, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

News Sep 01, 2017 by Paul Shepard
ROHM now Offering SiC, IGBTs and Gate Drivers in India

ROHM now Offering SiC, IGBTs and Gate Drivers in India

News Aug 30, 2017 by Paul Shepard
60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

News Aug 23, 2017 by Paul Shepard
Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices

News Aug 16, 2017 by Paul Shepard
Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project

News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN

News Aug 15, 2017 by Paul Shepard
SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability

News Aug 08, 2017 by Paul Shepard