Vishay Extends P-Channel TrenchFET Gen III Technology to Dual 12V Power MOSFET
Vishay Intertechnology, Inc. introduced a new dual 12V p-channel TrenchFET® Gen III power MOSFET with what the company says is the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2 by 2mm footprint area.
With the SiA975DJ, Vishay extends its p-channel TrenchFET Gen III technology to dual 12V power MOSFETs in the ultra-small PowerPAK SC-70 package for handheld electronics. The new device will be used for load, PA, and battery switches in game consoles and portable devices such as cell phones, smart phones, PDAs, and MP3 players.
For these devices, the lower on-resistance of the SiA975DJ translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous dual p-channel power MOSFET on the market in ultra-small packages, thus prolonging battery life between charges. The MOSFET’s low on-resistance also means a lower voltage drop at peak currents to better prevent undervoltage lockout conditions with the IC/load. Alternatively, the designer may be able to use a lower-voltage battery.
The SiA975DJ offers an ultra-low on-resistance of 41mΩ at 4.5V, 60mΩ at 2.5V, and 110mΩ at 1.8V. The closest competing MOSFET is a 20V p-channel device with an 8V gate-to-source rating, and which features an on-resistance of 60mΩ at a 4.5V gate drive and 80mΩ at 2.5V. These values are 32 and 25% higher, respectively, than the SiA975DJ.
The compact 2 by 2mm footprint of the SiA975DJ’s PowerPAK SC-70 package is half the size of the TSOP-6, while offering comparable on-resistance. 100% Rg tested, the MOSFET is halogen free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.
Samples and production quantities of the new SiA975DJ TrenchFET power MOSFET are available now, with lead times of 16 weeks for larger orders. Pricing for U.S. delivery in 100,000-piece quantities starts at $0.15 per piece.
