TriQuint Releases New GaN Product Solutions to Increase RF Performance in Defense & Commercial Systems

TriQuint Semiconductor, Inc. released four new gallium nitride (GaN) devices. TriQuint claims its GaN solutions improve RF efficiency, reduce overall costs and enhance system ruggedness.

According to the company, GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies. GaN devices are also seen by the industry as key to future ’green’ RF and dc-dc power solutions that can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.

"TriQuint is advancing state-of-the-art high frequency / high power GaN research. Our internal product development programs are creating new commercial and defense lower-voltage devices. Today we are announcing four new GaN products enabled by TriQuint’s high performance technology leadership," said TriQuint Defense Products and Foundry Services Vice President and General Manager, James L. Klein.

TriQuint is announcing three new GaN power amplifiers that deliver greater efficiency, wideband coverage and excellent performance for communications, defense and civilian radar: the TGA2572-FL (14-16 GHz), now available; as well as the TGA2579-FL (14-15.5 GHz) and the TGA2593-GSG (13-15 GHz), available in July. TriQuint is also announcing availability of the T1G6003028-FS, a 30W wideband GaN packaged transistor that can cut the number of driver circuits in a typical power amplifier design by 50%.

More news and information regarding the latest developments in Smart Grid electronics can be found at Darnell’s SmartGridElectronics.Net.