Siliconix Targets POLs with Integrated FET+Drivers
Vishay Intertechnology Inc. has added two new high-speed converter solutions that integrate the control MOSFET, the synchronous MOSFET, and driver circuit in a low-profile, high-performance PowerPAK® MLF 10x10 package. The new products simplify the single and multiphase dc-dc design process and provide 3% higher efficiency compared with discrete solutions.
Intended for applications in servers, routers, point-of-load (POL) converters, and 3.3-V, 5-V, and 12-V intermediate bus architecture environments, the new devices enable higher power ratings in a compact footprint. The integration of the MOSFETs and driver serves to minimize the parasitic leakage inductance that can cause ringing and spikes at the switching node.
The SiC714CD10 and SiC711CD10 can be used along with any pulse-width modulation IC or ASIC to produce an efficient buck converter. A low-side MOSFET control pin enables pre-biased startup, which prevents an undesirable sinking current from a pre-charged output capacitor from causing problems, particularly in POL and server applications.
The new SiC714CD10, rated for input voltages from 3.3 V to 16 V, delivers up to 27A of continuous output current in still air and is optimized for a 10% duty ratio. Typical on-resistance values are 3 mOhms for the low-side and 10.2 mOhms for the high-side MOSFET.
Vishay's SiC711CD10 is rated for input voltages from 3.3 V to 16 V and a 40% duty ratio, and it provides continuous output current up to 25A. Typical on-resistance values are 4 mOhms for both the high- and low-side MOSFETs.
Both devices are optimized for 12-V to logic level conversion and are rated for a switching frequency range of 100 kHz to greater than 1 MHz. Their PowerPAK MLF 10x10 package provides low thermal impedance, and its simple pad geometries enable straightforward board layout and assembly.
Break-before-make operation provides "shoot-thru" immunity and minimizes dead time. These devices also feature undervoltage lockout and a turn-on/turn-off capability. An internal bootstrap diode further reduces the number of external components required.
Samples and production quantities of the new fast-switching MOSFETs with integrated driver are available now, with lead times of 12 weeks for larger orders.
