New Industry Products

Philips Semi Intros SiliconMAX Family of Power MOSFETs

June 06, 1999 by Jeff Shepard

Philips Semiconductors (Sunnyvale, CA) announced SiliconMAX, a new family of power MOSFET devices that achieve ultra-low power dissipation by utilizing an enhanced version of Philips' TrenchMOS process technology. According to Philips, the new MOSFETs provide designers with a far lower Rds(on) rating in the same size package, or allows for the use of a much smaller device for the same Rds(on) value, than comparable DMOS devices. The 100V SiliconMAX device in the TO220 package achieves a maximum Rds(on) of 15 millohms, while the 100V D-PAK version achieves an maximum Rds(on) value of just 25 millohms, the same rating as a typical and much larger DMOS device in a TO220 package. The low-gate charge (QGD) of the SiliconMAX MOSFETs (44nC for the 15-milliohn 100V D2-PAK device) also means that they switch much faster than conventional DMOS FETs, exhibiting less than half the switching losses. SiliconMAX is available with voltage ratings of 25V, 55V, 100V 150V and 200V. The 25V, 55V and 100V devices in D2PAK and TO220 packages are in full production. The 150V and 200V versions in D2-PAK and TO220 are sampling now with production slated for July 1999. Pricing for the PSMN005-25D is $1.42 in 10,000 piece quantities.