Microsemi Announces Rugged VHF Power RF MOSFET Operating Up to 165VDC

Microsemi Corp. announced a new rugged VHF Power RF MOSFET for MRI, CO2 Lasers, RF Plasma generators as well as broadband linear amplifier applications.Designated the ARF521, Microsemi’s latest RF MOSFET utilizes a newly-patented process and finer geometry that operates reliably at up to 165Vdc, delivering much higher peak power and RF gain than in previous high voltage parts.

The ARF521 is a single die, in a rugged SOE package and is capable of 150W output power at up to 81MHz. These high-power, high-voltage RF generators are used extensively for plasma generation, CO2 laser exciters, medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers.

Microsemi has developed a proprietary ultrahigh voltage wafer fabrication process for making RF power MOSFETs. This is said to double the transistor’s available safe operating area, dramatically improving its resistance to load mismatch, providing superior thermal stability, and significantly enhanceing the ability to operate reliably in Class AB.

The 165Vdc maximum operating voltage simplifies output impedance matching circuitry and facilitates combining a dc power supply and RF power amplifier into an integrated assembly that can significantly reduce size and overall system cost.

Samples are available now. At quantities of 500 pieces, the unit price for the ARF521 is $44.05.