IXYS Corp. (Santa Clara, CA) introduced the IXTH10P60 p-channel enhancement-mode power MOSFET, which features a continuous drain current rating of 10A, a drain-source voltage of 600V and a drain-source on-resistance of 1.15ohms. The MOSFET is housed in a TO-247 package and has a power rating of 300W at 25 degrees C. It also exhibits very low turn on and off times of 33ns and 35ns, respectively, and a low gate charge of only 160nC.
The new MOSFET can fill the need for many totem pole output stages for driving heavy loads from positive and negative buses (derived from full rectification of 240Vac mains), as well as perform in applications requiring complementary p-channel power MOSFETs along with an equally rated n-channel MOSFET. High-voltage buck converters, operating off rectified 220Vac mains, can also be built by utilizing the IXTH10P60. Other similar applications include buck converters, high-side switches and the power output stages of power amplifiers.
Pricing is $10.10 in 1,000-piece quantities.
