IXYS Introduces High-Current GigaMOS TrenchT2 Power MOSFETs in New Proprietary SMPD Power Packages
IXYS Corp. announced the release of its new 75V/500A Power MOSFET, the MMIX1F520N075T2. The featured device merges IXYS’ high-performance TrenchT2™ technology with its new proprietary high-current density power package, referred to as the "SMPD" (Prefix MM).
The MMIX1F520N075T2 was developed to address the rapidly growing requirements in the market for compact, low loss, high-current density isolated devices. These devices provide designers with the best combination of fast switching, high current capability, rugged device design, low on-resistance and cost-effectiveness in a variety of high power switching applications. Suitable applications include dc-dc converters, UPS, electrical bikes, motor control, solid state relays, and high-current industrial battery charging applications.
IXYS’ TrenchT2 technology allows for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. Power switching capabilities of the device is further enhanced with IXYS’ HiPerFET™ process, yielding a fast intrinsic rectifier, providing low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. Additional features include a 175 degrees Centigrade maximum operating temperature and avalanche capabilities.
The high-current ratings of the MMIX1F520N075T2 promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability and cost.
IXYS’ new SMPD power package incorporates a Direct-Copper-Bond (DCB) ceramic isolator which provides 2500Vrms electrical isolation between die and heat sink. Due to the matched thermal expansion coefficients of silicon and DCB ceramic, mechanical stress to the die and solder caused by power and temperature cycling is reduced, thus improving upon reliability of the device. With an ultra-low package profile (5.3 x 24.8 x 32.3mm), the SMPD power package features nearly one-fourth the weight and one-third the volume of conventional isolated high power packages (i.e., SOT-227), providing designers with an innovative compact device that delivers excellent power handling capabilities and thermal transfer characteristics.
