Infineon CoolMOS C7 Superjunction FETs Claim “Best-in-Class” RDS(on) for All Packages

Infineon Technologies AG has expanded its high-voltage portfolio with CoolMOS™ C7, introducing a new 650V Superjunction MOSFET technology. The new C7 product family claims best-in-class RDS(on) for all standard packages and — due to its low switching losses — efficiency improvements over the full load range. C7 is optimized for hard switching topologies such as continuous-conduction mode power factor correction (CCM PFC), two-transistor forward (TTF) and solar boost. Typical applications are solar, server, telecom and UPS. The 650V breakdown voltage also makes C7 suitable for applications which require extra safety margin.

“The C7 series continues a twelve year innovation path of high quality Superjunction CoolMOS technology strengthening Infineon’s leadership in high-end power conversion,” says Jan-Willem Reynaerts, Product Segment Head of High Voltage Power Conversion at Infineon Technologies. “With CoolMOS C7´s Best-in-Class Figure of Merit (RDS(on)*EOSS), our customers are enabled to design a new generation of power conversion systems with an unprecedented combination of improved power density as well as efficiency.”

The C7 series offers an RDS(on) of 19mΩ in a TO-247 package and 45mΩ in the TO-220 and D2PAK packages. The fast switching performance of C7 now enables designers to operate at switching frequencies greater than 100 kHz while achieving “Titanium” levels of efficiency in server PFC stages. This enables higher power density by reducing the space requirements for the passive components. Reduced energy in the output capacitance (Eoss) as well as the low gate charge (Qg) bring efficiency benefits also at light load conditions. Samples of the 650V CoolMOS C7 products are available now. Volume production will start in June 2013.