Fairchild Offers Total Power Device Solutions for LCD TV Power Designs
Fairchild Semiconductor announced its new Stealth™ II and Hyperfast II diode technology as part of a total power device solution specifically designed to optimize LCD TV switch-mode power supply (SMPS) applications. The new FFP08S60S and FFPF08S60S Stealth II diodes exhibit excellent soft recovery (tb/ta > 1.3) and very fast reverse-recovery time (trr < 25nS @ 600V breakdown voltage). These characteristics are suitable for reducing problematic EMI and MOSFET switching losses in CCM (continuous-current-mode) power factor correction (PFC) designs.
Also being introduced is the FFPF08H60S Hyperfast II diode. Featuring fast reverse-recovery time (trr < 35nS @ 600V breakdown voltage) and low forward-voltage drop (Vf < 2.1V), this diode helps reduce conduction losses to increase energy efficiency in DCM (discontinuous-current-mode) PFC designs. The new Stealth II and Hyperfast II technology was developed to combine with, and complement, an array of Fairchild’s existing UniFET™ and SuperFET™ MOSFET technologies. This vast product offering presents a comprehensive solution for increasing system efficiency and reliability while lowering EMI in LCD TV power designs.
An LCD TV’s SMPS operates in two types of PFC current modes: CCM and DCM. For optimizing CCM designs, Fairchild’s new FFP/PF08S60S Stealth II fast-recovery diodes can be combined with Fairchild’s previously introduced UniFET MOSFETs. For example, the 19A 500V FDA18N50 UniFET utilizes proprietary planar stripe DMOS technology for low RDS(on) (0.265 Ohm @ VGS = 10V) and high unclamped inductive switching (UIS) capability. Combining a new Stealth II diode with this UniFET device reduces switching loss by 10% compared to previous-generation devices, which results in excellent system efficiency. Similarly, Fairchild’s new FFPF08H60S Hyperfast II diode can be combined with the same UniFET device to improve efficiency and avalanche protection during DCM PFC operation.
Today’s LCD TV SMPS must reduce power consumption while maintaining system performance and reliability in switching-mode operation. Fairchild’s existing SuperFET Fast Recovery MOSFET (FRFET) products are optimized to meet this design challenge. Uniting SuperFET technology with a lifetime killing process, SuperFET FRFETs offer improved body-diode characteristics, turn-off dv/dt immunity and low EMI. The latest-generation FCPF11N60F device, for example, offers trr = 120ns & Qrr = 0.8µC and up to 50V/ns dv/dt capability. These advanced MOSFETs increase efficiency and reliability in even the most cutting-edge LLC half-bridge converters.
New Stealth II and Hyperfast II products are available in lead (Pb)-free packages that meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020C and are compliant with European Union regulations now in effect. They are available now, with a 12 week ARO, and priced (each, 1000) at US$0.54 – FFPF08S60S (Stealth II diode, TO-220F) and FFPO8S6OS (Stealth II diode, TO-220), and $0.48 – (Hyperfast II diode, TO-220F).
